Question 90: Semiconductors and Logic Gates

Question

The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and  4 V respectively, is :

Accepted Answer

$$	herefore$$ $$R = {{\Delta v} \over {\Delta i}}$$
Now, dynamic resistance at $$V = 2V$$ is
$${R_2} = {{0.1} \over {5 	imes {{10}^{ - 3}}}}\,\Omega $$
= 20 $$\Omega$$
Similarly,
$${R_4} = {{0.2} \over {50 	imes {{10}^{ - 3}}}} = 4\,\Omega $$
$${{{R_2}} \over {{R_4}}} = {5 \over 1}$$

Answer

1 : 2

Answer

5 : 1

Answer

1 : 40

Answer

20 : 1

Semiconductors and Logic Gates

The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and 4 V respectively, is :

Choose the correct answer: