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Class 12 • Physics
Semiconductors and Logic Gates
Chapter-14
246 Questions
0 Video Solutions
113 Easy133 Medium
Practice Questions
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1
MediumJEE Mains2026
\text { The output } Y \text { for the given inputs } A \text { and } B \text { to the circuit is : }
Options:
A)
B)
C)
D)
2
MediumJEE Mains2026
Refer to the logic circuit given below. For two inputs ( A=1, B=1 ) and ( A=0, B=1 ), output ( Y ) will be \_\_\_\_ .
Options:
A) 1, 0 respectively
B) 0, 1 respectively
C) 0, 0 respectively
D) 1, 1 respectively
3
MediumJEE Mains2026
The maximum rated power of the LED is 2 mW and it is used in the circuit with input voltage of 5 V as shown in the figure below. The current through resistance R_S is 0.5 mA . The minimum value of the resistance of R_S, to ensure that the LED is not damaged is \_\_\_\_ \mathrm{k} \Omega.
Options:
A) 6
B) 2
C) 4
D) 5
4
MediumJEE Mains2026
In a semiconductor p-n diode, the doping concentrations on p-side and n-side are 10^{15} atoms / \mathrm{cm}^3 and 10^{18} atoms / \mathrm{cm}^3, respectively. Which one of the following statements is true?
Options:
A) Widths of depletion region on either side of the interface are equal
B) The depletion region width is more on p -side compared to that in n -side
C) The depletion region width is more on n-side compared to that in p-side
D) No depletion region forms because of unequal doping concentrations on p and n -sides
5
MediumJEE Mains2026
For the given logic circuit, which of the following inputs combination will make both LED-1 and LED-2 to glow?
Options:
A) \mathrm{A}=0, \mathrm{~B}=1, \mathrm{C}=1
B) \mathrm{A}=1, \mathrm{~B}=0, \mathrm{C}=0
C) \mathrm{A}=1, \mathrm{~B}=0, \mathrm{C}=1
D) \mathrm{A}=1, \mathrm{~B}=1, \mathrm{C}=0
6
MediumJEE Mains2026
Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason \mathbf{R} Assertion A : A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically. Reason R : Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage. choose the correct answer from the options given below
Options:
A) Both \mathbf{A} and \mathbf{R} are true and \mathbf{R} is the correct explanation of \mathbf{A}
B) Both \mathbf{A} and \mathbf{R} are true but \mathbf{R} is NOT the correct explanation of \mathbf{A}
C) A is true but \mathbf{R} is false
D) A is false but \mathbf{R} is true
7
MediumJEE Mains2026
Two 4 bits binary numbers, A=1101 and B=1010 are given in the inputs of a logic circuit shown in figure below. The output (Y) will be :
Options:
A) Y=1101
B) Y=0010
C) Y=0111
D) Y=1000
8
EasyJEE Mains2026
Consider a circuit consisting of a capacitor (20 \mu \mathrm{~F}), resistor (100 \Omega) and two identical diodes as shown in figure. The resistance of diode under forward biasing condition is 10 \Omega. The time constant of the circuit is \alpha \times 10^{-3} \mathrm{~s}. The value of \alpha is \_\_\_\_
Options:
A) 2.2
B) 2.0
C) 2.1
D) 2.4
9
EasyJEE Mains2026
If X and Y are the inputs, the given circuit works as _________.
Options:
A) OR gate
B) AND gate
C) NAND gate
D) NOR gate
10
EasyJEE Mains2026
For the given circuit (shown in part (A)) the time dependent input voltage v_{in}(t) and corresponding output v_{o}(t) are shown in part (B) and part (C), respectively. Identify the components that are used in the circuit between points X and Y.
Options:
A)
B)
C)
D)
11
EasyJEE Mains2026
Two p-n junction diodes D_1 and D_2 are connected as shown in figure. A and B are input signals and C is the output. The given circuit will function as a ________.
Options:
A) AND Gate
B) OR Gate
C) NOR Gate
D) NAND Gate
12
MediumJEE Mains2026
Assuming in forward bias condition there is a voltage drop of 0.7 V across a silicon diode, the current through diode D_1 in the circuit is \_\_\_\_ mA . (Assume all diodes in the given circuit are identical)
Options:
A) 17.6
B) 18.8
C) 20.15
D) 11.7
13
EasyJEE Mains2026
\text { Identify the correct truth table of the given logic circuit. }
Options:
A) \begin{array}{|c|c|c|} \hline \text { A } & \text { B } & \text { Y } \\ \hline \hline 0 & 0 & 0 \\ \hline \hline 0 & 1 & 0 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 0 \\ \hline \end{array}
B) \begin{array}{|c|c|c|} \hline \text { A } & \text { B } & \text { Y } \\ \hline \hline 0 & 0 & 0 \\ \hline \hline 0 & 1 & 1 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 0 \\ \hline \end{array}
C) \begin{array}{|c|c|c|} \hline \text { A } & \text { B } & \text { Y } \\ \hline \hline 0 & 0 & 1 \\ \hline \hline 0 & 1 & 1 \\ \hline \hline 1 & 0 & 1 \\ \hline \hline 1 & 1 & 0 \\ \hline \end{array}
D) \begin{array}{|c|c|c|} \hline \text { A } & \text { B } & \text { Y } \\ \hline \hline 0 & 0 & 1 \\ \hline \hline 0 & 1 & 0 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 0 \\ \hline \end{array}
14
EasyJEE Mains2026
\text { For the given logic gate circuit, which of the following is the correct truth table? }
Options:
A) \begin{array}{c|c|c} n & m & z \\ \hline 0 & 0 & 1 \\ 0 & 1 & 1 \\ 1 & 1 & 0 \\ 1 & 0 & 0 \end{array}
B) \begin{array}{c|c|c} n & m & z \\ \hline 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 1 & 1 \\ 1 & 0 & 0 \end{array}
C) \begin{array}{c|c|c} n & m & z \\ \hline 0 & 0 & 0 \\ 0 & 1 & 1 \\ 1 & 1 & 0 \\ 1 & 0 & 1 \end{array}
D) \begin{array}{c|c|c} n & m & z \\ \hline 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 1 & 0 \\ 1 & 0 & 0 \end{array}
15
MediumJEE Mains2026
The following diagram shows a Zener diode as a voltage regulator. The Zener diode is rated at V_z=5 \mathrm{~V} and the desired current in load is 5 mA . The unregulated voltage source can supply upto 25 V . Considering the Zener diode can withstand four times of the load current, the value of resistor R_s (shown in circuit) should be \_\_\_\_ \Omega.
Options:
A) 100
B) 10
C) 1000
D) 4000
16
EasyJEE Mains2026
The correct truth table for the given input data of the following logic gate is :
Options:
A) Inputs
Output
A
B
C
D
Y
1
1
0
1
1
0
0
1
1
0
1
0
1
0
0
1
1
1
1
1
B) Inputs
Output
A
B
C
D
Y
1
1
0
1
0
0
0
1
1
1
1
0
1
0
1
1
1
1
1
1
C) Inputs
Output
A
B
C
D
Y
1
1
0
1
1
0
0
1
1
0
1
0
1
0
1
1
1
1
1
0
D) Inputs
Output
A
B
C
D
Y
1
1
0
1
0
0
0
1
1
0
1
0
1
0
1
1
1
1
1
1
17
MediumJEE Mains2026
Find the correct combination of \mathrm{A}, \mathrm{B}, \mathrm{C} and D inputs which can cause the LED to glow.
Options:
A) 1000
B) 0011
C) 0100
D) 1101
18
MediumJEE Mains2026
The charge stored by the capacitor C in the given circuit in the steady state is __________ µC.
Options:
A) 7.5
B) 5
C) 10
D) 12.5
19
EasyJEE Mains2026
\text { The given circuit works as : }
Options:
A) NOR gate
B) OR gate
C) AND gate
D) NAND gate
20
EasyJEE Mains2025
The output voltage in the following circuit is (Consider ideal diode case)
Options:
A) 0 V
B) +5 V
C) −5 V
D) 10 V
21
EasyJEE Mains2025
Consider the following logic circuit. The output is Y = 0 when :
Options:
A) A = 1 and B = 0
B) A = 0 and B = 0
C) A = 1 and B = 1
D) A = 0 and B = 1
22
MediumJEE Mains2025
In the following circuit, the reading of the ammeter will be ( Take Zener breakdown voltage =4 \mathrm{~V})
Options:
A) 60 mA
B) 80 mA
C) 10 mA
D) 24 mA
23
MediumJEE Mains2025
Consider a n-type semiconductor in which \mathrm{n}_{\mathrm{e}} and \mathrm{n}_{\mathrm{h}} are number of electrons and holes, respectively. (A) Holes are minority carriers (B) The dopant is a pentavalent atom (C) \mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \neq \mathrm{n}_i^2 (where \mathrm{n}_i is number of electrons or holes in semiconductor when it is intrinsic form) (D) \mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \geqslant \mathrm{n}_i^2 (E) The holes are not generated due to the donors Choose the correct answer from the options given below :
Options:
A) (A), (B), (E) only
B) (A), (C), (E) only
C) (A), (B), (C) only
D) (A), (C), (D) only
24
MediumJEE Mains2025
The Boolean expression \mathrm{Y}=A \bar{B} C+\bar{A} \bar{C} can be realised with which of the following gate configurations. A. One 3-input AND gate, 3 NOT gates and one 2-input OR gate, One 2-input AND gate, B. One 3 -input AND gate, 1 NOT gate, One 2 -input NOR gate and one 2 -input OR gate C. 3 -input OR gate, 3 NOT gates and one 2 -input AND gate Choose the correct answer from the options given below:
Options:
A) B, C Only
B) A, B, C Only
C) A, B Only
D) A, C Only
25
EasyJEE Mains2025
\text {The truth table corresponding to the circuit given below is: }
Options:
A) \begin{array}{|c|c|c|} \hline \mathrm{A} & \mathrm{~B} & \mathrm{C} \\ \hline 0 & 0 & 0 \\ \hline 0 & 1 & 0 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 1 \\ \hline \end{array}
B) \begin{array}{|c|c|c|} \hline \text { A } & \mathrm{B} & \mathrm{C} \\ \hline 0 & 0 & 1 \\ \hline 1 & 0 & 0 \\ \hline 0 & 1 & 0 \\ \hline 1 & 1 & 0 \\ \hline \end{array}
C) \begin{array}{|c|c|c|} \hline \text { A } & \mathrm{B} & \mathrm{C} \\ \hline 0 & 0 & 1 \\ \hline 0 & 1 & 0 \\ \hline 1 & 0 & 0 \\ \hline 1 & 1 & 0 \\ \hline \end{array}
D) \begin{array}{|c|c|c|} \hline \mathrm{A} & \mathrm{~B} & \mathrm{C} \\ \hline 0 & 0 & 0 \\ \hline 1 & 0 & 0 \\ \hline 0 & 1 & 0 \\ \hline 1 & 1 & 1 \\ \hline \end{array}
26
EasyJEE Mains2025
\text { Choose the correct logic circuit for the given truth table having inputs } A \text { and } B \text {. } $ Inputs Output A B Y 0 0 0 0 1 0 1 0 1 1 1 1
Options:
A)
B)
C)
D)
27
EasyJEE Mains2025
\text { In the digital circuit shown in the figure, for the given inputs the } P \text { and } Q \text { values are : }
Options:
A) P=0, Q=1
B) P=1, Q=0
C) \mathrm{P}=0, \mathrm{Q}=0
D) P=1, Q=1
28
MediumJEE Mains2025
A zener diode with 5 V zener voltage is used to regulate an unregulated dc voltage input of 25 V . For a 400 \Omega resistor connected in series, the zener current is found to be 4 times load current. The load current \left(I_L\right) and load resistance \left(R_L\right) are :
Options:
A) \mathrm{I}_{\mathrm{L}}=0.02 \mathrm{~mA} ; \mathrm{R}_{\mathrm{L}}=250 \Omega
B) \mathrm{I}_{\mathrm{L}}=10 \mathrm{~A} ; \mathrm{R}_{\mathrm{L}}=0.5 \Omega
C) \mathrm{I}_{\mathrm{L}}=10 \mathrm{~mA} ; \mathrm{R}_{\mathrm{L}}=500 \Omega
D) \mathrm{I}_{\mathrm{L}}=20 \mathrm{~mA} ; \mathrm{R}_{\mathrm{L}}=250 \Omega
29
EasyJEE Mains2025
The truth table for the circuit given below is:
Options:
A) A
B
Y
0
0
0
1
1
1
1
0
1
0
1
1
B) A
B
Y
0
0
0
1
0
1
0
1
0
1
1
0
C) A
B
Y
0
0
0
1
0
0
1
1
0
0
1
1
D) A
B
Y
0
0
0
0
1
1
1
0
1
1
1
0
30
EasyJEE Mains2025
For the circuit shown above, equivalent GATE is :
Options:
A) NOT gate
B) NAND gate
C) AND gate
D) OR gate
31
EasyJEE Mains2025
Which of the following circuits has the same output as that of the given circuit?
Options:
A)
B)
C)
D)
32
EasyJEE Mains2025
The output of the circuit is low (zero) for : (A) X=0, Y=0 (B) X=0, Y=1 (C) X=1, Y=0 (D) X=1, Y=1 Choose the correct answer from the options given below :
Options:
A) (A), (B) and (C) only
B) (A), (C) and (D) only
C) (B), (C) and (D) only
D) (A), (B) and (D) only
33
MediumJEE Mains2025
Consider the following statements : A. The junction area of solar cell is made very narrow compared to a photo diode. B. Solar cells are not connected with any external bias. C. LED is made of lightly doped p-n junction. D. Increase of forward current results in continuous increase of LED light intensity. E. LEDs have to be connected in forward bias for emission of light. Choose the correct answer from the options given below :
Options:
A) A, C, E Only
B) B, E Only
C) A, C Only
D) B, D, E Only
34
EasyJEE Mains2025
What is the current through the battery in the circuit shown below?
Options:
A) 1.5 A
B) 0.25 A
C) 1.0 A
D) 0.5 A
35
MediumJEE Mains2025
Refer to the circuit diagram given in the figure. which of the following observations are correct? A. Total resistance of circuit is 6 \Omega B. Current in Ammeter is 1 A C. Potential across A B is 4 Volts. D. Potential across CD is 4 Volts E. Total resistance of the circuit is 8 \Omega. Choose the correct answer from the options given below:
Options:
A) B, C and E Only
B) A, C and D Only
C) A, B and C Only
D) A, B and D Only
36
EasyJEE Mains2025
To obtain the given truth table, following logic gate should be placed at G :
Options:
A) NOR Gate
B) OR Gate
C) AND Gate
D) NAND Gate
37
EasyJEE Mains2025
Which of the following circuits represents a forward biased diode? Choose the correct answer from the options given below:
Options:
A) (C) and (E) only
B) (A) and (D) only
C) (B), (D) and (E) only
D) (B), (C) and (E) only
38
EasyJEE Mains2024
In the truth table of the above circuit the value of X and Y are :
Options:
A) 1, 1
B) 0, 1
C) 1, 0
D) 0, 0
39
EasyJEE Mains2024
The $I-V$ characteristics of an electronic device shown in the figure. The device is :
Options:
A) a solar cell
B) a transistor which can be used as an amplifier
C) a diode which can be used as a rectifier
D) a zener diode which can be used as a voltage regulator
40
EasyJEE Mains2024
A light emitting diode (LED) is fabricated using GaAs semiconducting material whose band gap is $1.42 \mathrm{~eV}$. The wavelength of light emitted from the LED is :
Options:
A) 1243 nm
B) 875 nm
C) 650 nm
D) 1400 nm
41
EasyJEE Mains2024
The output $\mathrm{Y}$ of following circuit for given inputs is :
Options:
A) A \cdot B
B) \bar{A} \cdot B
C) \Lambda \cdot B(\Lambda+B)
D) 0
42
EasyJEE Mains2024
The acceptor level of a p-type semiconductor is $6 \mathrm{~eV}. The maximum wavelength of light which can create a hole would be : Given \mathrm{hc}=1242 \mathrm{~eV} \mathrm{~nm}$.
Options:
A) 407 nm
B) 103.5 nm
C) 414 nm
D) 207 nm
43
EasyJEE Mains2024
The correct truth table for the following logic circuit is :
Options:
A)
B)
C)
D)
44
EasyJEE Mains2024
The output (Y) of logic circuit given below is 0 only when :
Options:
A) \mathrm{A}=0, \mathrm{~B}=0
B) \mathrm{A}=0, \mathrm{~B}=1
C) \mathrm{A}=1, \mathrm{~B}=0
D) \mathrm{A=1, B=1}
45
EasyJEE Mains2024
Following gates section is connected in a complete suitable circuit. For which of the following combination, bulb will glow (ON) :
Options:
A) \mathrm{A}=1, \mathrm{~B}=1, \mathrm{C}=1, \mathrm{D}=0
B) \mathrm{A}=1, \mathrm{~B}=0, \mathrm{C}=0, \mathrm{D}=0
C) \mathrm{A}=0, \mathrm{~B}=0, \mathrm{C}=0, \mathrm{D}=1
D) \mathrm{A}=0, \mathrm{~B}=1, \mathrm{C}=1, \mathrm{D}=1
46
EasyJEE Mains2024
Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n junction diode :
Options:
A)
B)
C)
D)
47
EasyJEE Mains2024
Identify the logic gate given in the circuit :
Options:
A) OR gate
B) NAND gate
C) NOR gate
D) AND gate
48
EasyJEE Mains2024
The value of net resistance of the network as shown in the given figure is :
Options:
A) (30 / 11) \Omega
B) 6 \Omega
C) (5 / 2) \Omega
D) (15 / 4) \Omega
49
MediumJEE Mains2024
To measure the temperature coefficient of resistivity \alpha of a semiconductor, an electrical arrangement shown in the figure is prepared. The arm BC is made up of the semiconductor. The experiment is being conducted at 25^{\circ} \mathrm{C} and resistance of the semiconductor arm is 3 \mathrm{~m} \Omega. Arm \mathrm{BC} is cooled at a constant rate of 2^{\circ} \mathrm{C} / \mathrm{s}. If the galvanometer \mathrm{G} shows no deflection after 10 \mathrm{~s}, then \alpha is :
Options:
A) -1 \times 10^{-2}{ }^{\circ} \mathrm{C}^{-1}
B) -2 \times 10^{-2}{ }^{\circ} \mathrm{C}^{-1}
C) -2.5 \times 10^{-2}{ }^{\circ} \mathrm{C}^{-1}
D) -1.5 \times 10^{-2}{ }^{\circ} \mathrm{C}^{-1}
50
MediumJEE Mains2024
In the given circuit if the power rating of Zener diode is 10 \mathrm{~mW}, the value of series resistance R_s to regulate the input unregulated supply is :
Options:
A) 10 \mathrm{k} \Omega
B) 10 \Omega
C) 1 \mathrm{k} \Omega
D) \frac{3}{7} \mathrm{k} \Omega<\mathrm{R}_{\mathrm{s}}<\frac{3}{5} \mathrm{k} \Omega
51
EasyJEE Mains2024
The output of the given circuit diagram is -
Options:
A)
B)
C)
D)
52
EasyJEE Mains2024
Identify the logic operation performed by the given circuit.
Options:
A) AND
B) NOR
C) OR
D) NAND
53
EasyJEE Mains2024
In the given circuit, the voltage across load resistance (R$_L$) is :
Options:
A) 8.75 V
B) 9.00 V
C) 8.50 V
D) 14.00 V
54
EasyJEE Mains2024
A Zener diode of breakdown voltage $10 \mathrm{~V}$ is used as a voltage regulator as shown in the figure. The current through the Zener diode is :
Options:
A) 0
B) 30 mA
C) 20 mA
D) 50 mA
55
EasyJEE Mains2024
The truth table for this given circuit is :
Options:
A)
B)
C)
D)
56
EasyJEE Mains2024
In the given circuit, the breakdown voltage of the Zener diode is $3.0 \mathrm{~V}. What is the value of \mathrm{I}_{\mathrm{z}}$ ?
Options:
A) 3.3 mA
B) 10 mA
C) 5.5 mA
D) 7 mA
57
EasyJEE Mains2024
The truth table of the given circuit diagram is :
Options:
A)
B)
C)
D)
58
EasyJEE Mains2024
Which of the following circuits is reverse - biased?
Options:
A)
B)
C)
D)
59
MediumJEE Mains2023
In the given circuit, the current (I) through the battery will be
Options:
A) 1A
B) 2.5 \mathrm{~A}
C) 2 \mathrm{~A}
D) 1.5 \mathrm{~A}
60
EasyJEE Mains2023
The output from NAND gate having inputs A and B given below will be,
Options:
A)
B)
C)
D)
61
EasyJEE Mains2023
For the following circuit and given inputs A and B, choose the correct option for output '$Y$'
Options:
A)
B)
C)
D)
62
EasyJEE Mains2023
In an n-p-n common emitter (CE) transistor the collector current changes from 5 $\mathrm{mA} to 16 \mathrm{~mA} for the change in base current from 100~ \mu \mathrm{A} and 200 ~\mu \mathrm{A}$, respectively. The current gain of transistor is __________.
Options:
A) 210
B) 0.9
C) 9
D) 110
63
EasyJEE Mains2023
The logic operations performed by the given digital circuit is equivalent to:
Options:
A) NOR
B) AND
C) NAND
D) OR
64
EasyJEE Mains2023
The logic performed by the circuit shown in figure is equivalent to :
Options:
A) NAND
B) AND
C) OR
D) NOR
65
EasyJEE Mains2023
If each diode has a forward bias resistance of $25 ~\Omega$ in the below circuit, Which of the following options is correct :
Options:
A) \frac{I_{3}}{I_{4}}=1
B) \frac{\mathrm{I}_{1}}{\mathrm{I}_{2}}=2
C) \frac{I_{2}}{\mathrm{I}_{3}}=1
D) \frac{I_{1}}{I_{2}}=1
66
MediumJEE Mains2023
A zener diode of power rating 1.6 W is to be used as voltage regulator. If the zener diode has a breakdown of 8V and it has to regulate voltage fluctuating between 3 V and 10 V. The value of resistance R s for safe operation of diode will be
Options:
A) 13 $\Omega
B) 13.3 $\Omega
C) 10 $\Omega
D) 12 $\Omega
67
EasyJEE Mains2023
For a given transistor amplifier circuit in $\mathrm{CE} configuration \mathrm{V}_{\mathrm{CC}}=1 \mathrm{~V}, \mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega, \mathrm{R}_{\mathrm{b}}=100 ~\mathrm{k} \Omega and \beta=100. Value of base current \mathrm{I}_{\mathrm{b}}$ is
Options:
A) \mathrm{I}_{\mathrm{b}}=100 ~\mu \mathrm{A}
B) \mathrm{I}_{\mathrm{b}}=0.1 ~\mu \mathrm{A}
C) \mathrm{I}_{\mathrm{b}}=1.0 ~\mu \mathrm{A}
D) \mathrm{I}_{\mathrm{b}}=10 ~\mu \mathrm{A}
68
EasyJEE Mains2023
For the logic circuit shown, the output waveform at $\mathrm{Y}$ is:
Options:
A)
B)
C)
D)
69
MediumJEE Mains2023
Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased. Reason R: Diffusion current in a p-n junction is from the $\mathrm{n}$-side to the p-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below
Options:
A) Both A and R are correct but R is NOT the correct explanation of A
B) A is correct but R is not correct
C) A is not correct but R is correct
D) Both A and R are correct and R is the correct explanation of A
70
EasyJEE Mains2023
Name the logic gate equivalent to the diagram attached
Options:
A) NOR
B) NAND
C) AND
D) OR
71
EasyJEE Mains2023
The resistivity $(\rho)$ of semiconductor varies with temperature. Which of the following curve represents the correct behaviour :
Options:
A)
B)
C)
D)
72
EasyJEE Mains2023
Choose the correct statement about Zener diode :
Options:
A) It works as a voltage regulator in reverse bias and behaves like simple pn junction diode in forward bias.
B) It works as a voltage regulator in both forward and reverse bias.
C) It works as a voltage regulator only in forward bias.
D) It works as a voltage regulator in forward bias and behaves like simple pn junction diode in reverse bias.
73
EasyJEE Mains2023
Match List I with List II: List I List II A. Intrinsic semiconductor I. Fermi-level near the valence bond B. n-type semiconductor II. Fermi-level in the middle of valence and conduction band. C. p-type semiconductor III. Fermi-level near the conduction band D. Metals IV. Fermi-level inside the conduction band Choose the correct answer from the options given below :
Options:
A) A-III, B-I, C-II, D-IV
B) A-II, B-I, C-III, D-IV
C) A-I, B-II, C-III, D-IV
D) A-II, B-III, C-I, D-IV
74
EasyJEE Mains2023
Given below are two statements : Statement I: In a typical transistor, all three regions emitter, base and collector have same doping level. Statement II: In a transistor, collector is the thickest and base is the thinnest segment. In the light of the above statements, choose the most appropriate answer from the options given below.
Options:
A) Statement I
is correct but
Statement II
is incorrect
B) Both
Statement I
and
Statement II
are incorrect
C) Statement I
is incorrect but
Statement II
is correct
D) Both
Statement I
and
Statement II
are correct
75
EasyJEE Mains2023
The effect of increase in temperature on the number of electrons in conduction band ($\mathrm{n_e}$) and resistance of a semiconductor will be as:
Options:
A) \mathrm{n}_{\mathrm{e}}$ decreases, resistance increases
B) Both $\mathrm{n}_{\mathrm{e}}$ and resistance increase
C) \mathrm{n}_{\mathrm{e}}$ increases, resistance decreases
D) Both $\mathrm{n}_{\mathrm{e}}$ and resistance decrease
76
MediumJEE Mains2023
The output Y for the inputs A and B of circuit is given by Truth table of the shown circuit is:
Options:
A)
B)
C)
D)
77
EasyJEE Mains2023
The output waveform of the given logical circuit for the following inputs A and B as shown below, is :
Options:
A)
B)
C)
D)
78
EasyJEE Mains2023
For the given logic gates combination, the correct truth table will be
Options:
A)
B)
C)
D)
79
EasyJEE Mains2023
Which one of the following statement is not correct in the case of light emitting diodes? A. It is a heavily doped p-n junction. B. It emits light only when it is forward biased. C. It emits light only when it is reverse biased. D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used. Choose the correct answer from the options given below:
Options:
A) A
B) B
C) C and D
D) C
80
EasyJEE Mains2023
Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons. Statement II : When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ameter. In the light of above statements, choose the most appropriate answer from the options given below
Options:
A) Statement I is incorrect but statement II is correct
B) Both Statement I and statement II are correct
C) Statement I is correct but statement II is incorrect
D) Both Statement I and Statement II are incorrect
81
MediumJEE Mains2023
Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity. Reason R : For a p-n junction diode, at applied voltage V the current in the forward bias is more than the current in the reverse bias for $\mathrm{|{V_z}| > \pm v \ge |{v_0}|} where \mathrm{v_0} is the threshold voltage and \mathrm{V_z}$ is the breakdown voltage. In the light of the above statements, choose the correct answer from the options given below
Options:
A) Both A and R are true but R is NOT the correct explanation of A
B) A is true but R is false
C) Both A and R are true and R is the correct explanation of A
D) A is false but R is true
82
EasyJEE Mains2023
The logic gate equivalent to the given circuit diagram is :
Options:
A) NOR
B) OR
C) NAND
D) AND
83
MediumJEE Mains2023
Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R Assertion A : Photodiodes are preferably operated in reverse bias condition for light intensity measurement. Reason R : The current in the forward bias is more than the current in the reverse bias for a $p-n$ junction diode. In the light of the above statements, choose the correct answer from the options given below :
Options:
A) Both A and R are true and R is the correct explanation of A
B) A is false but R is true
C) A is true but R is false
D) Both A and R are true but R is NOT the correct explanation of A
84
MediumJEE Mains2022
An n.p.n transistor with current gain $\beta=100$ in common emitter configuration is shown in figure. The output voltage of the amplifier will be
Options:
A) 0.1 V
B) 1.0 V
C) 10 V
D) 100 V
85
EasyJEE Mains2022
Identify the solar cell characteristics from the following options :
Options:
A)
B)
C)
D)
86
EasyJEE Mains2022
For a constant collector-emitter voltage of $8 \mathrm{~V}, the collector current of a transistor reached to the value of 6 \mathrm{~mA} from 4 \mathrm{~mA}, whereas base current changed from 20 \,\mu \mathrm{A} to 25 \,\mu \mathrm{A}$ value. If transistor is in active state, small signal current gain (current amplification factor) will be :
Options:
A) 240
B) 400
C) 0.0025
D) 200
87
EasyJEE Mains2022
A logic gate circuit has two inputs A and B and output Y. The voltage waveforms of A, B and Y are shown below. The logic gate circuit is :
Options:
A) AND gate
B) OR gate
C) NOR gate
D) NAND gate
88
EasyJEE Mains2022
In the circuit, the logical value of $A=1 or B=1 when potential at A or B is 5 \mathrm{~V} and the logical value of A=0 or B=0 when potential at A or B is 0 \mathrm{~V}$. The truth table of the given circuit will be :
Options:
A) \matrix{
A & B & Y \cr
0 & 0 & 0 \cr
1 & 0 & 0 \cr
0 & 1 & 0 \cr
1 & 1 & 1 \cr
}
B) \matrix{
A & B & Y \cr
0 & 0 & 0 \cr
1 & 0 & 1 \cr
0 & 1 & 1 \cr
1 & 1 & 1 \cr
}
C) \matrix{
A & B & Y \cr
0 & 0 & 0 \cr
1 & 0 & 0 \cr
0 & 1 & 0 \cr
1 & 1 & 0 \cr
}
D) \matrix{
A & B & Y \cr
0 & 0 & 1 \cr
1 & 0 & 1 \cr
0 & 1 & 1 \cr
1 & 1 & 0 \cr
}
89
MediumJEE Mains2022
In the given circuit the input voltage V in is shown in figure. The cut-in voltage of p-n junction diode (D 1 or D 2 ) is 0.6 V. Which of the following output voltage (V 0 ) waveform across the diode is correct?
Options:
A)
B)
C)
D)
90
EasyJEE Mains2022
In the following circuit, the correct relation between output (Y) and inputs A and B will be :
Options:
A) Y = AB
B) Y = A + B
C) Y = \overline {AB}
D) Y = \overline {A+B}
91
EasyJEE Mains2022
For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode :
Options:
A) It is two terminal device which conducts current in both directions.
B) It is two terminal device which conducts current in one direction only.
C) It does not conduct current gives an initial deflection which decays to zero.
D) It is three terminal device which conducts current in one direction only between central terminal and either of the remaining two terminals
92
EasyJEE Mains2022
Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R. Assertion A : n-p-n transistor permits more current than a p-n-p transistor. Reason R : Electrons have greater mobility as a charge carrier. Choose the correct answer from the options given below :
Options:
A) Both A and R are true, and R is correct explanation of A.
B) Both A and R are true but R is NOT the correct explanation of A.
C) A is true but R is false.
D) A is false but R is true.
93
EasyJEE Mains2022
For a transistor to act as a switch, it must be operated in
Options:
A) Active region.
B) Saturation state only.
C) Cut-off state only.
D) Saturation and cut-off state.
94
EasyJEE Mains2022
Identify the correct Logic Gate for the following output (Y) of two inputs A and B.
Options:
A)
B)
C)
D)
95
EasyJEE Mains2022
The positive feedback is required by an amplifier to act an oscillator. The feedback here means :
Options:
A) External input is necessary to sustain ac signal in output.
B) A portion of the output power is returned back to the input.
C) Feedback can be achieved by LR network.
D) The base-collector junction must be forward biased.
96
MediumJEE Mains2022
The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and 4 V respectively, is :
Options:
A) 1 : 2
B) 5 : 1
C) 1 : 40
D) 20 : 1
97
EasyJEE Mains2022
Identify the logic operation performed by the given circuit:
Options:
A) AND gate
B) OR gate
C) NOR gate
D) NAND gate
98
MediumJEE Mains2022
The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :
Options:
A) fractional change in majority carriers produce higher forward bias current
B) fractional change in majority carriers produce higher reverse bias current
C) fractional change in minority carriers produce higher forward bias current
D) fractional change in minority carriers produce higher reverse bias current
99
MediumJEE Mains2021
In the given figure, each diode has a forward bias resistance of 30$\Omega$ and infinite resistance in reverse bias. The current I 1 will be :
Options:
A) 3.75 A
B) 2.35 A
C) 2 A
D) 2.73 A
100
MediumJEE Mains2021
If V A and V B are the input voltages (either 5V or 0V) and V 0 is the output voltage then the two gates represented in the following circuit (A) and (B) are :-
Options:
A) AND and OR Gate
B) OR and NOT Gate
C) NAND and NOR Gate
D) AND and NOT Gate
101
EasyJEE Mains2021
Statement - I : To get a steady dc output from the pulsating voltage received from a full wave rectifier we can connect a capacitor across the output parallel to the load R L . Statement - II : To get a steady dc output from the pulsating voltage received from a full wave rectifier we can connect an inductor in series with R L . In the light of the above statements, choose the most appropriate answer from the options given below :
Options:
A) Statement I is true but Statement II is false
B) Statement I is false but Statement II is true
C) Both Statement I and Statement II are false
D) Both Statement I and Statement II are true
102
EasyJEE Mains2021
In the following logic circuit the sequence of the inputs A, B are (0, 0), (0, 1), (1, 0) and (1, 1). The output Y for this sequence will be :
Options:
A) 1, 0, 1, 0
B) 0, 1, 0, 1
C) 1, 1, 1, 0
D) 0, 0, 1, 1
103
EasyJEE Mains2021
Choose the correct waveform that can represent the voltage across R of the following circuit, assuming the diode is ideal one :
Options:
A)
B)
C)
D)
104
EasyJEE Mains2021
For a transistor $\alpha and \beta are given as \alpha = {{{I_C}} \over {{I_E}}} and \beta = {{{I_C}} \over {{I_B}}}. Then the correct relation between \alpha and \beta$ will be :
Options:
A) \alpha = {{1 - \beta } \over \beta }
B) \beta = {\alpha \over {1 - \alpha }}
C) \alpha \beta = 1
D) \alpha = {\beta \over {1 - \beta }}
105
EasyJEE Mains2021
For a transistor in CE mode to be used as an amplifier, it must be operated in :
Options:
A) Both cut-off and Saturation
B) Saturation region only
C) Cut-off region only
D) The active region only
106
EasyJEE Mains2021
Four NOR gates are connected as shown in figure. The truth table for the given figure is :
Options:
A)
B)
C)
D)
107
EasyJEE Mains2021
Identify the logic operation carried out by the given circuit :-
Options:
A) OR
B) AND
C) NOR
D) NAND
108
EasyJEE Mains2021
Statement I : By doping silicon semiconductor with pentavalent material, the electrons density increases. Statement II : The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below :
Options:
A) Statement - I is true but Statement - II is false.
B) Statement - I is false but Statement - II is true.
C) Both Statement I and Statement II are true.
D) Both Statement I and Statement II are false.
109
EasyJEE Mains2021
Find the truth table for the function Y of A and B represented in the following figure.
Options:
A)
B)
C)
D)
110
EasyJEE Mains2021
Identify the logic operation carried out.
Options:
A) OR
B) AND
C) NOR
D) NAND
111
MediumJEE Mains2021
Consider a situation in which reserve biased current of a particular P-N junction increases when it is exposed to a light of wavelength $\le$ 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.
Options:
A) 1 eV
B) 4 eV
C) 0.5 eV
D) 2 eV
112
EasyJEE Mains2021
For the circuit shown below, calculate the value of I z :
Options:
A) 25 mA
B) 0.1 A
C) 0.15 A
D) 0.05 A
113
EasyJEE Mains2021
The correct relation between $\alpha (ratio of collector current to emitter current) and \beta$ (ratio of collector current to base current) of a transistor is :
Options:
A) \beta = {\alpha \over {1 + \alpha }}
B) \alpha = {\beta \over {1 - \alpha }}
C) \alpha = {\beta \over {1 + \beta }}
D) \beta = {1 \over {1 - \alpha }}
114
EasyJEE Mains2021
Which one of the following will be the output of the given circuit?
Options:
A) XOR Gate
B) NOR Gate
C) NAND Gate
D) AND Gate
115
EasyJEE Mains2021
The output of the given combination gates represents :
Options:
A) AND Gate
B) NOR Gate
C) NAND Gate
D) XOR Gate
116
EasyJEE Mains2021
The following logic gate is equivalent to :
Options:
A) NOR Gate
B) NAND Gate
C) OR Gate
D) AND Gate
117
EasyJEE Mains2021
Draw the output signal Y in the given combination of gates.
Options:
A)
B)
C)
D)
118
EasyJEE Mains2021
LED is constructed from Ga-As-P semiconducting material. The energy gap of this LED is 1.9 eV. Calculate the wavelength of light emitted and its colour. [h = 6.63 $\times 10 -34 Js and c = 3 \times 10 8 ms -$1 ]
Options:
A) 654 nm and orange colour
B) 654 nm and red colour
C) 1046 nm and red colour
D) 1046 nm and blue colour
119
EasyJEE Mains2021
For extrinsic semiconductors; when doping level is increased;
Options:
A) Fermi-level of both p-type and n-type semiconductors will go upward for T > T
F
K and downward for T < T
F
K, where T
F
is Fermi temperature.
B) Fermi-level of p-type semiconductor will go upward and Fermi-level of n-type semiconductors will go downward
C) Fermi-level of p and n-type semiconductors will not be affected.
D) Fermi-level of p-type semiconductors will go downward and Fermi-level of n-type semiconductor will go upward.
120
EasyJEE Mains2021
The truth table for the following logic circuit is :
Options:
A)
B)
C)
D)
121
EasyJEE Mains2021
A 5V battery is connected across the points X and Y. Assume D 1 and D 2 to be normal silicon diodes. Find the current supplied by the battery if the +ve terminal of the battery is connected to point X.
Options:
A) \sim $ 0.5 A
B) \sim $ 1.5 A
C) \sim $ 0.43 A
D) \sim $ 0.86 A
122
EasyJEE Mains2021
The logic circuit shown above is equivalent to :
Options:
A)
B)
C)
D)
123
MediumJEE Mains2021
Given below are two statements : Statement I : PN junction diodes can be used to function as transistor, simply by connecting two diodes, back to back, which acts as the base terminal. Statement II : In the study of transistor, the amplification factor $\beta$ indicates ratio of the collector current to the base current. In the light of the above statements, choose the correct answer from the options given below.
Options:
A) Both Statement I and Statement II are false
B) Statement I is false but Statement II is true
C) Both Statement I and Statement II are true
D) Statement I is true but Statement II is false
124
EasyJEE Mains2021
Zener breakdown occurs in a p $-$ n junction having p and n both :
Options:
A) heavily doped and have wide depletion layer.
B) lightly doped and have narrow depletion layer.
C) heavily doped and have narrow depletion layer.
D) lightly doped and have wide depletion layer.
125
EasyJEE Mains2021
If an emitter current is changed by 4 mA, the collector current changes by 3.5 mA. The value of $\beta$ will be :
Options:
A) 0.875
B) 0.5
C) 3.5
D) 7
126
MediumJEE Mains2020
Identify the correct output signal Y in the given combination of gates (as shown) for the given inputs A and B.
Options:
A)
B)
C)
D)
127
MediumJEE Mains2020
Two Zener diodes (A and B) having breakdown voltages of 6 V and 4 V respectively, are connected as shown in the circuit below. The output voltage V 0 variation with input voltage linearly increasing with time, is given by : (V input = 0 V at t = 0) (figures are qualitative)
Options:
A)
B)
C)
D)
128
MediumJEE Mains2020
With increasing biasing voltage of a photodiode, the photocurrent magnitude :
Options:
A) Increases initially and after attaining
certain value, it decreases
B) Increases linearly
C) Increases initially and saturates finally
D) Remains constant
129
MediumJEE Mains2020
Identify the operation performed by the circuit given below :
Options:
A) AND
B) NAND
C) OR
D) NOT
130
MediumJEE Mains2020
Take the breakdown voltage of the zener diode used in the given circuit as 6V. For the input voltage shown in figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to scale)
Options:
A)
B)
C)
D)
131
MediumJEE Mains2020
Which of the following will NOT be observed when a multimeter (operating in resistance measuring mode) probes connected across a component, are just reversed?
Options:
A) Multimeter shows NO deflection in both cases i.e. before and after reversing the probes if the
chosen component is metal wire.
B) Multimeter shows a deflection, accompanied by a splash of light out of connected component in one direction and NO deflection on reversing the probes if the chosen component is LED.
C) Multimeter shows an equal deflection in both cases i.e. before and after reversing the probes if
the chosen component is resistor.
D) Multimeter shows NO deflection in both cases i.e. before and after reversing the probes if the
chosen component is capacitor.
132
MediumJEE Mains2020
If a semiconductor photodiode can detect a photon with a maximum wavelength of 400 nm, then its band gap energy is : Planck’s constant h = 6.63 $ \times 10 –34 J.s. Speed of light c = 3 \times $ 10 8 m/s
Options:
A) 1.5 eV
B) 2.0 eV
C) 3.1 eV
D) 1.1 eV
133
MediumJEE Mains2020
When a diode is forward biased, it has a voltage drop of 0.5 V. The safe limit of current through the diode is 10 mA. If a battery of emf 1.5 V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is
Options:
A) 50 $\Omega
B) 200 $\Omega
C) 300 $\Omega
D) 100 $\Omega
134
MediumJEE Mains2020
In the following digital circuit, what will be the output at ‘Z’, when the input (A, B) are (1, 0), (0, 0), (1, 1,), (0, 1)
Options:
A) 1, 1, 0, 1
B) 0, 1, 0, 0
C) 1, 0, 1, 1
D) 0, 0, 1, 0
135
MediumJEE Mains2020
The current i in the network is :
Options:
A) 0.6 A
B) 0.3 A
C) 0 A
D) 0.2 A
136
MediumJEE Mains2020
Two identical capacitors A and B, charged to the same potential 5V are connected in two different circuits as shown below at time t = 0. If the charge on capacitors A and B at time t = CR is Q A and Q B respectively, then (Here e is the base of natural logarithm)
Options:
A) Q
A
= ${{CV} \over e}, Q
B
= {{VC} \over 2}
B) Q
A
= ${{CV} \over 2}, Q
B
= {{VC} \over e}
C) Q
A
= VC, Q
B
= ${{VC} \over e}
D) Q
A
= VC, Q
B
= CV
137
MediumJEE Mains2020
In the given circuit, value of Y is :
Options:
A) toggles between 0 and 1
B) 1
C) will not execute
D) 0
138
MediumJEE Mains2020
Boolean relation at the output stage-Y for the following circuit is :
Options:
A) A.B
B) \overline A + \overline B
C) \overline A .\overline B
D) A + B
139
MediumJEE Mains2020
In the figure, potential difference between A and B is :
Options:
A) 10 V
B) 5 V
C) zero
D) 15 V
140
MediumJEE Mains2020
Which of the following gives a reversible operation?
Options:
A)
B)
C)
D)
141
MediumJEE Mains2019
Figure shows a DC voltage regulator circuit, with a Zener diode of breakdown voltage = 6V. If the unregulated input voltage varies between 10 V to 16 V, then what is maximum Zener current?
Options:
A) 3.5 mA
B) 1.5 mA
C) 2.5 mA
D) 7.5 mA
142
MediumJEE Mains2019
The transfer characteristic curve of a transistor, having input and output resistance 100 $\Omega and 100 k\Omega $ respectively is shown in the figure. The voltage and power gain, are respectively:
Options:
A) 5 × 10
4
, 5 × 10
5
B) 5 × 10
4
, 5 × 10
6
C) 5 × 10
4
, 2.5 × 10
6
D) 2.5 × 10
4
, 2.5 × 10
6
143
MediumJEE Mains2019
The truth table for the circuit given in the fig. is:
Options:
A) \left| {\matrix{
A & B & Y \cr
0 & 0 & 1 \cr
0 & 1 & 1 \cr
1 & 0 & 1 \cr
1 & 1 & 1 \cr
} } \right|
B) \left| {\matrix{
A & B & Y \cr
0 & 0 & 1 \cr
0 & 1 & 0 \cr
1 & 0 & 0 \cr
1 & 1 & 0 \cr
} } \right|
C) \left| {\matrix{
A & B & Y \cr
0 & 0 & 1 \cr
0 & 1 & 1 \cr
1 & 0 & 0 \cr
1 & 1 & 0 \cr
} } \right|
D) \left| {\matrix{
A & B & Y \cr
0 & 0 & 0 \cr
0 & 1 & 0 \cr
1 & 0 & 1 \cr
1 & 1 & 1 \cr
} } \right|
144
MediumJEE Mains2019
The figure represents a voltage regulator circuit using a Zener diode. The breakdown voltage of the Zener diode is 6 V and the load resistance is, R L = 4k$\Omega . The series resistance of the circuit is R i = 1 k\Omega $. If the battery voltage V B varies from 8 V to 16 V, what are the minimum and maximum values of the current through Zener diode?
Options:
A) 0.5 mA; 8.5 mA
B) 1.5 mA; 8.5 mA
C) 1 mA; 8.5 mA
D) 0.5 mA; 6 mA
145
MediumJEE Mains2019
An n-p-n transistor operates as a common emitter amplifier, with a power gain of 60 dB. The input circuit resistance is 100$\Omega and the output load resistance is 10 k\Omega . The common emitter current gain \beta $ is :
Options:
A) 10
4
B) 10
2
C) 6 × 10
2
D) 60
146
MediumJEE Mains2019
The logic gate equivalent to the given logic circuit is :-
Options:
A) NAND
B) AND
C) NOR
D) OR
147
MediumJEE Mains2019
An NPN transistor is used in common emitter configuration as an amplifier with 1 k$\Omega $ load resistance. Signal voltage of 10 mV is applied across the base-emitter. This produces a 3 mA change in the collector current and 15μA change in the base current of the amplifier. The input resistance and voltage gain are :
Options:
A) 0.67 kW, 200
B) 0.33 kW, 1.5
C) 0.67 kW, 300
D) 0.33 kW, 300
148
MediumJEE Mains2019
A common emitter amplifier circuit, built using an npn transistor, is shown in the figure. Its dc current gain is 250, R C = 1k$\Omega$ and V CC = 10 V. What is the minimum base current for V CE to reach saturation ?
Options:
A) 100 $\mu $A
B) 7 $\mu $A
C) 10 $\mu $A
D) 40 $\mu $A
149
MediumJEE Mains2019
The reverse breakdown voltage of a Zener diode is 5.6 V in the given circuit. The current IZ through the Zener is :
Options:
A) 7 mA
B) 17 mA
C) 15mA
D) 10 mA
150
MediumJEE Mains2019
In the figure, given that V BB supply can vary from 0 to 5.0 V, V CC = 5V, $\beta dc = 200, R B = 100 k\Omega , R C = 1 k\Omega $ and V BE = 1.0 V. The minimum base current and the input voltage at which the transistor will go to saturation, will be respectively :
Options:
A) 20 $\mu $A and 2.8 V
B) 25 $\mu $A and 2.8 V
C) 20 $\mu $A and 3.5 V
D) 25 $\mu $A and 3.5 V
151
MediumJEE Mains2019
The output of the given logic circuit is :
Options:
A) \overline A B
B) AB + \overline {AB}
C) A\overline B + \overline A B
D) A\overline B
152
MediumJEE Mains2019
The circuit shown below contains two ideal diodes, each with a forward resistance of 50 $\Omega . If the battery voltage is 6 V, the current through the 100 \Omega $ resistance (in Amperes) is :
Options:
A) 0.027
B) 0.030
C) 0.036
D) 0.020
153
MediumJEE Mains2019
In the given circuit the current through Zener Diode is close to:
Options:
A) 0.0 mA
B) 6.7 mA
C) 4.0 mA
D) 6.0 mA
154
MediumJEE Mains2019
For the circuit shown below, the current through the Zener diode is -
Options:
A) 5 mA
B) zero
C) 14 mA
D) 9 mA
155
MediumJEE Mains2019
To get output 1 at R, for the given logic gate circuit the input values must be
Options:
A) x = 0, y = 0
B) x = 1, y = 0
C) x = 0, y = 1
D) x = 1, y = 1
156
MediumJEE Mains2019
Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V 0 changes by : (assume that the Ge diode has large breakdown voltage)
Options:
A) 0.8 V
B) 0.6 V
C) 0.2 V
D) 0.4 V
157
MediumJEE Mains2019
Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 10 19 m $-$3 and their mobility is 1.6 m 2 /(V.s) then the resistivity of the semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to :
Options:
A) 2\,\Omega $m
B) 4$\,\Omega $m
C) 0.4 $\,\Omega $m
D) 0.2 $\,\Omega $m
158
MediumJEE Mains2018
In the given circuit, the current through zener diode is :
Options:
A) 5.5 mA
B) 6.7 mA
C) 2.5 mA
D) 3.3 mA
159
MediumJEE Mains2018
The reading of the ammeter for a silicon diode in the given circuit is :
Options:
A) 13.5 mA
B) 0
C) 15 mA
D) 11.5 mA
160
MediumJEE Mains2018
Truth table for the following digital circuit will be :
Options:
A)
B)
C)
D)
161
MediumJEE Mains2018
In a common emitter configuration with suitable bias, it is given that ${R_L} is the load resistance and {R_{BE}} is small signal dynamic resistance (input side). Then, voltage gain, current gain and power gain are given, respectively, by : \beta is curret gain, {{\rm I}_B},{{\rm I}_C} and {{\rm I}_E}$ are respectively base, collector and emitter currents.
Options:
A) \beta {{{R_L}} \over {{R_{BE}}}},{{\Delta {{\rm I}_C}} \over {\Delta {{\rm I}_B}}},{\beta ^2}{{{R_L}} \over {{R_{BE}}}}
B) \beta {{{R_L}} \over {{R_{BE}}}},{{\Delta {{\rm I}_E}} \over {\Delta {{\rm I}_B}}},{\beta ^2}{{{R_L}} \over {{R_{BE}}}}
C) {\beta ^2}{{{R_L}} \over {{R_{BE}}}},{{\Delta {{\rm I}_C}} \over {\Delta {{\rm I}_E}}},{\beta ^2}{{{R_L}} \over {{R_{BE}}}}
D) {\beta ^2}{{{R_L}} \over {{R_{BE}}}},{{\Delta {{\rm I}_C}} \over {\Delta {{\rm I}_B}}},\beta {{{R_L}} \over {{R_{BE}}}}
162
MediumJEE Mains2017
The current gain of a common emitter amplifier is 69. If the emitter current is 7.0 mA, collector current is :
Options:
A) 9.6 mA
B) 6.9 mA
C) 0.69 mA
D) 69 mA
163
MediumJEE Mains2017
The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is :
Options:
A) 10
B) 10
$-$6
C) 10
6
D) 100
164
MediumJEE Mains2017
What is the conductivity of a semiconductor sale having electron concentration of $5 \times {10^{18}}\,\,{m^{ - 3}}, hole concentration of 5 \times {10^{19}}\,\,{m^{ - 3}}, electron mobility of 2.0 m 2 V -1 s -1 and hole mobility of 0.01 m 2 V -1 s -1 ? (Take charge of electronas 1.6 \times 10 -$19 c)
Options:
A) 1.68 ($\Omega -m)
-$1
B) 1.83 ($\Omega -m)
-$1
C) 0.59 ($\Omega -m)
-$1
D) 1.20 ($\Omega -m)
-$1
165
MediumJEE Mains2017
In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and the output voltages will be:
Options:
A) 180°
B) 45°
C) 90°
D) 135°
166
MediumJEE Mains2016
To get an output of 1 from the circuit shown in figure the input must be :
Options:
A) a = 0, b = 1, c = 0
B) a = 1, b = 0, c = 0
C) a = 1, b = 0, c = 1
D) a = 0, b = 0, c = 1
167
MediumJEE Mains2016
The ratio (R) of output resistance r 0 , and the input resistance ri in measurements of input and output characteristics of a transistor is typically in the range:
Options:
A) R ~ 10
2
$-$ 10
3
B) R ~ 1 $-$ 10
C) R ~ 0.1 $-$ 0.01
D) R ~ 0.1 $-$ 1.0
168
MediumJEE Mains2016
A realistic graph depicting the variation of the reciprocal of input resistance in an input characteristics measurement in a commonemitter transistor configuration is :
Options:
A)
B)
C)
D)
169
MediumJEE Mains2016
An experiment is performed to determine the I - V characteristics of a Zener diode, which has a protective resistance of R = 100 $\Omega $, and a maximum power of dissipation rating of 1 W. The minimum voltage range of the DC source in the circuit is :
Options:
A) 0 $-$ 5 V
B) 0 $-$ 8 V
C) 0 $-$ 12 V
D) 0 $-$ 24 V
170
MediumJEE Mains2016
An unknown transistor needs to be identified as a npn or pnp type. A multimeter, with + ve and − ve terminals, is used to measure resistance between different terminals of transistor. If terminal 2 is the base of the transistor then which of the following is correct for a pnp transistor ?
Options:
A) + ve termial 1, $-$ve terminal 2, resistance high
B) + ve termial 2, $-$ve terminal 1, resistance high
C) + ve termial 3, $-$ve terminal 2, resistance high
D) + ve termial 2, $-$ve terminal 3, resistance low
171
MediumJEE Mains2016
The truth table given in fig. represents : A B Y 0 0 0 0 1 1 1 0 1 1 1 1
Options:
A) AND - Gate
B) OR - Gate
C) NAND - Gate
D) NOR - Gate
172
MediumJEE Mains2016
The temperature dependence of resistance of $Cu and undoped Si in the temperature range 300-400 K,$ is best described by :
Options:
A) Linear increases for $Cu, exponential decrease of Si.
B) Linear decrease for $Cu, linear decrease for Si
C) Linear increase for $Cu, linear increase for Si.
D) Linear increase for $Cu, exponential increase for Si
173
MediumJEE Mains2016
If $a, b, c, d are inputs to a gate and x$ is its output, then, as per the following time graph, the gate is :
Options:
A) OR
B) NAND
C) NOT
D) AND
174
MediumJEE Mains2016
Identify the semiconductor devices whose characteristics are given below, in the order $(a), (b), (c), (d)$ :
Options:
A) Simple diode, Zener diode, Solar cell, Light dependent resistance
B) Zener diode, Simple diode, Light dependent resistance, Solar cell
C) Solar cell, Light dependent resistance, Zener diode, simple diode
D) Zener diode, Solar cell, simple diode, Light dependent resistance
175
MediumJEE Mains2015
A red $LED emits light at 0.1 watt uniformly around it. The amplitude of the electric field of the light at a distance of 1 m$ from the diode is :
Options:
A) 5.48 V/m
B) 7.75 V/m
C) 1.73 V/m
D) 2.45 V/m
176
MediumJEE Mains2014
The forward biased diode connection is:
Options:
A)
B)
C)
D)
177
MediumJEE Mains2014
The current voltage relation of diode is given by ${\rm I} = \left( {{e^{100V/T}} - 1} \right)mA, where the applied voltage V is in volts and the temperature T is in degree kelvin. If a student makes an error measuring \pm 0.01\,V while measuring the current of 5 mA at 300 K, what will be the error in the value of current on mA$?
Options:
A) 0.2 mA
B) 0.02 mA
C) 0.5 mA
D) 0.05 mA
178
MediumJEE Mains2013
The ${\rm I}-V characteristic of an LED$ is
Options:
A)
B)
C)
D)
179
MediumJEE Mains2013
A diode detector is used to detect an amplitude modulated wave of $60\% modulation by using a condenser of capacity 250 picofarad in parallel with a load resistance 100 kilo ohm.$ Find the maximum modulated frequency which could be detected by it.
Options:
A) 10.62 MHz
B) 10.62 kHz
C) 5.31 MHz
D) 5.31 kHz
180
MediumJEE Mains2012
Truth table for system of four $NAND$ gates as shown in figure is:
Options:
A)
B)
C)
D)
181
MediumJEE Mains2010
The combination of gates shown below yields
Options:
A) OR gate
B) NOT gate
C) XOR gate
D) NAND gate
182
MediumJEE Mains2009
The logic circuit shown below has the input waveforms $'A' and 'B'$ as shown. Pick out the correct output waveform. Output is
Options:
A)
B)
C)
D)
183
MediumJEE Mains2009
A $p-n junction (D) shown in the figure can act as a rectifier. An alternating current source (V) is connected in the circuit. The current (I) in the resistor (R)$ can be shown by :
Options:
A)
B)
C)
D)
184
MediumJEE Mains2008
In the circuit below, $A and B represent two inputs and C$ represents the output. The circuit represents
Options:
A) NOR gate
B) AND gate
C) NAND gate
D) OR gate
185
MediumJEE Mains2008
A working transistor with its three legs marked $P,Q and R is tested using a multi-meter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multi-meter to R and the other (positive) terminal to P or Q,$ some resistance is seen on the multi-meter. Which of the following is true for the transistor?
Options:
A) It is an $npn transistor with R$ as base
B) It is an $pnp transistor with R$ as collector
C) It is an $pnp transistor with R$ as emitter
D) It is an $npn transistor with R$ as collector
186
MediumJEE Mains2007
If in a $p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across {R_L}$ will be
Options:
A)
B)
C)
D)
187
MediumJEE Mains2007
Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate ?
Options:
A) The number of free electrons for conduction is significant only in $Si and Ge but small in C.
B) The number of free conduction electrons is significant in $C but small in Si and Ge.
C) The number of free conduction electrons is negligibly small in all the three.
D) The number of free electrons for conduction is significant in all the three
188
MediumJEE Mains2006
If the lattice constant of this semiconductor is decreased, then which of the following is correct?
Options:
A) All ${E_c},{E_g},{E_v}$ increase
B) {E_c} and {E_v} increase, but {E_g}$ decreases
C) {E_c} and {E_v} decrease, but {E_g}$ increases
D) All ${E_c},{E_g},{E_v}$ decrease
189
MediumJEE Mains2006
In the following, which one of the diodes is reverse biased?
Options:
A)
B)
C)
D)
190
MediumJEE Mains2006
The circuit has two oppositively connected ideal diodes in parallel. What is the current following in the circuit?
Options:
A) 1.71 A
B) 2.00 A
C) 2.31 A
D) 1.33 A
191
MediumJEE Mains2006
In a common base mode of a transistor, the collector current is $5.488 mA for an emitter current of 5.60mA. The value of the base current amplification factor \left( \beta \right)$ will be
Options:
A) 49
B) 50
C) 51
D) 48
192
MediumJEE Mains2006
If the ratio of the concentration of electrons to that of holes in a semiconductor is ${7 \over 5} and the ratio of currents is {7 \over 4},$ then what is the ratio of their drift velocities?
Options:
A) {5 \over 8}
B) {4 \over 5}
C) {5 \over 4}
D) {4 \over 7}
193
MediumJEE Mains2006
A solid which is not transparent to visible light and whose conductivity increases with temperature is formed by
Options:
A) Ionic bonding
B) Covalent bonding
C) Vander Waals bonding
D) Metallic bonding
194
MediumJEE Mains2005
In a full wave rectifier circuit operating from $50 Hz$ mains frequency, the fundamental frequency in the ripple would be
Options:
A) 25 Hz
B) 50 Hz
C) 70.7 Hz
D) 100 Hz
195
MediumJEE Mains2005
In a common base amplifier, the phase difference between the input signal voltage and output voltage is
Options:
A) \pi
B) {\pi \over 4}
C) {\pi \over 2}
D) 0
196
MediumJEE Mains2005
The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $2480 nm is incident on it. The band gap in (eV)$ for the semiconductor is
Options:
A) 2.5 eV
B) 1.1 eV
C) 0.7 eV
D) 0.5 eV
197
MediumJEE Mains2004
A piece of copper and another of germanium are cooled from room temperature to $77K,$ the resistance of
Options:
A) copper increases and germanium decreases
B) each of them decreases
C) each of them increases
D) copper decreases and germanium increases
198
MediumJEE Mains2004
The manifestation of band structure in solids is due to
Options:
A) Bohr's correspondence principle
B) Pauli's exclusion principle
C) Heisenberg's uncertainty principle
D) Boltzmann's law
199
MediumJEE Mains2004
When $p-n$ junction diode is forward biased then
Options:
A) both the depletion region and barrier height are reduced
B) the depletion region is widened and barrier height is reduced
C) the depletion region is reduced and barrier height is increased
D) both the depletion region and barrier height are increased
200
MediumJEE Mains2004
When $npn$ transistor is used as an amplifer
Options:
A) electrons move from collector to base
B) holes move from emitter to base
C) electrons move from base to collector
D) holes move from base to emitter
201
MediumJEE Mains2004
For a transistor amplifier in common emitter configuration for load impedance of $1k\,\Omega \left( {{h_{fe}} = 50} \right. and \left. {{h_{oe}} = 25} \right)$ the current gain is
Options:
A) -24.8
B) -15.7
C) -5.2
D) -48.78
202
MediumJEE Mains2003
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
Options:
A) crystal structure
B) variation of the number of charge carries with temperature
C) type of bonding
D) variation of scattering mechanism with temperature
203
MediumJEE Mains2003
In the middle of the depletion layer of a reverse- biased $p-n$ junction, the
Options:
A) electric field is zero
B) potential is maximum
C) electric field is maximum
D) potential is zero
204
MediumJEE Mains2003
A strip of copper and another of germanium are cooled from room temperature to $80K.$ The resistance of
Options:
A) each of these decreases
B) copper strip increases and that of germanium decreases
C) copper strip decreases and that of germanium increases
D) each of these increases
205
MediumJEE Mains2002
By increasing the temperature, the specific resistance of a conductor and a semiconductor
Options:
A) increases for both
B) decreases for both
C) increases, decreases
D) decreases, increases
206
MediumJEE Mains2002
At absolute zero, Si acts as
Options:
A) non-metal
B) metal
C) insulator
D) none of these
207
MediumJEE Mains2002
The energy band gap is maximum in
Options:
A) metals
B) superconductors
C) insulator
D) semiconductor
208
MediumJEE Mains2002
The part of a transistor which is most heavily doped to produce large number of majority carriers is
Options:
A) emmiter
B) base
C) collector
D) can be any of the above three
209
EasyInteger TypeJEE Mains2026
A diode has Zener voltage of 10 V and maximum power dissipation of 0.5 W , then the minimum resistance to be used in series with this diode for safety when it is connected to a 25 V power supply is \_\_\_\_ \Omega.
Answer: Enter a numeric value
210
EasyInteger TypeJEE Mains2026
A voltage regulating circuit consisting of Zener diode, having break-down voltage of 10 V and maximum power dissipation of 0.4 W , is operated at 15 V . The approximate value of protective resistance in this circuit is \_\_\_\_ \Omega.
Answer: Enter a numeric value
211
EasyInteger TypeJEE Mains2024
A potential divider circuit is connected with a dc source of $20 \mathrm{~V}, a light emitting diode of glow in voltage 1.8 \mathrm{~V} and a zener diode of breakdown voltage of 3.2 \mathrm{~V}. The length (PR) of the resistive wire is 20 \mathrm{~cm}. The minimum length of PQ to just glow the LED is _________ \mathrm{cm}$.
Answer: Enter a numeric value
212
MediumInteger TypeJEE Mains2023
From the given transfer characteristic of a transistor in $\mathrm{CE} configuration, the value of power gain of this configuration is 10^{x}, for \mathrm{R}_{\mathrm{B}}=10 ~\mathrm{k} \Omega, and \mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega. The value of x$ is __________.
Answer: Enter a numeric value
213
EasyInteger TypeJEE Mains2022
A $8 \mathrm{~V} Zener diode along with a series resistance \mathrm{R} is connected across a 20 \mathrm{~V} supply (as shown in the figure). If the maximum Zener current is 25 \mathrm{~mA}, then the minimum value of R will be _______ \Omega$.
Answer: Enter a numeric value
214
EasyInteger TypeJEE Mains2022
If the potential barrier across a p-n junction is $0.6 \mathrm{~V}. Then the electric field intensity, in the depletion region having the width of 6 \times 10^{-6} \mathrm{~m}, will be __________ \times 10^{5} \mathrm{~N} / \mathrm{C}$.
Answer: Enter a numeric value
215
EasyInteger TypeJEE Mains2022
The typical transfer characteristics of a transistor in CE configuration is shown in figure. A load resistor of $2 \,k \Omega is connected in the collector branch of the circuit used. The input resistance of the transistor is 0.50 \,\mathrm{k} \Omega$. The voltage gain of the transistor is ______________.
Answer: Enter a numeric value
216
EasyInteger TypeJEE Mains2022
In the circuit shown below, maximum zener diode current will be _________ $\mathrm{mA}$.
Answer: Enter a numeric value
217
EasyInteger TypeJEE Mains2022
Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between A and B is __________ $\Omega$.
Answer: Enter a numeric value
218
EasyInteger TypeJEE Mains2022
The energy band gap of semiconducting material to produce violet (wavelength = 4000$\mathop A\limits^o ) LED is ______________ \mathrm{eV}$. (Round off to the nearest integer).
Answer: Enter a numeric value
219
MediumInteger TypeJEE Mains2022
The circuit diagram used to study the characteristic curve of a zener diode is connected to variable power supply (0 $- 15 V) as shown in figure. A zener diode with maximum potential V z = 10 V and maximum power dissipation of 0.4 W is connected across a potential divider arrangement. The value of resistance R P connected in series with the zener diode to protect it from the damage is ________________ \Omega$.
Answer: Enter a numeric value
220
EasyInteger TypeJEE Mains2022
A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0 $\times 10 5 ms -1 . The speed with which electron enters the p side will be {x \over 3} \times {10^5} ms -1 the value of x is _____________. (Given mass of electron = 9 \times 10 -31 kg, charge on electron = 1.6 \times 10 -$19 C.)
Answer: Enter a numeric value
221
MediumInteger TypeJEE Mains2022
A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100 $\muA, it brings a change of 10 mA in collector current. If the load resistance is 2 k\Omega and input resistance is 1 k\Omega, the value of power gain is x \times$ 10 4 . The value of x is _____________.
Answer: Enter a numeric value
222
MediumInteger TypeJEE Mains2022
A zener of breakdown voltage V z = 8 V and maximum zener current, I ZM = 10 mA is subjectd to an input voltage V i = 10 V with series resistance R = 100 $\Omega$. In the given circuit R L represents the variable load resistance. The ratio of maximum and minimum value of R L is _____________.
Answer: Enter a numeric value
223
EasyInteger TypeJEE Mains2022
The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6 V. The current through the resister of 40 $\Omega$ is __________ mA.
Answer: Enter a numeric value
224
EasyInteger TypeJEE Mains2022
As per the given circuit, the value of current through the battery will be ____________ A.
Answer: Enter a numeric value
225
EasyInteger TypeJEE Mains2022
In an experiment of CE configuration of n-p-n transistor, the transfer characteristics are observed as given in figure. If the input resistance is 200 $\Omega and output resistance is 60 \Omega$, the voltage gain in this experiment will be ____________.
Answer: Enter a numeric value
226
EasyInteger TypeJEE Mains2022
In the given circuit, the value of current I L will be ____________ mA. (When R L = 1k$\Omega$)
Answer: Enter a numeric value
227
MediumInteger TypeJEE Mains2022
A transistor is used in common-emitter mode in an amplifier circuit. When a signal of 10 mV is added to the base-emitter voltage, the base current changes by 10 $\muA and the collector current changes by 1.5 mA. The load resistance is 5 k\Omega$. The voltage gain of the transistor will be _________.
Answer: Enter a numeric value
228
EasyInteger TypeJEE Mains2021
A zener diode of power rating 2W is to be used as a voltage regulator. If the zener diode has a breakdown of 10 V and it has to regulate voltage fluctuated between 6 V and 14 V, the value of R s for safe operation should be ___________ $\Omega$.
Answer: Enter a numeric value
229
MediumInteger TypeJEE Mains2021
A circuit is arranged as shown in figure. The output voltage V 0 is equal to ................... V.
Answer: Enter a numeric value
230
MediumInteger TypeJEE Mains2021
For the given circuit, the power across Zener diode is .............. mW.
Answer: Enter a numeric value
231
EasyInteger TypeJEE Mains2021
A transistor is connected in common emitter circuit configuration, the collector supply voltage is 10 V and the voltage drop across a resistor of 1000 $\Omega in the collector circuit is 0.6 V. If the current gain factor (\beta) is 24, then the base current is _____________ \mu$A. (Round off to the Nearest Integer)
Answer: Enter a numeric value
232
EasyInteger TypeJEE Mains2021
In a semiconductor, the number density of intrinsic charge carries at 27$^\circC is 1.5 \times 10 16 /m 3 . If the semiconductor is doped with impurity atom, the hole density increases to 4.5 \times 10 22 /m 3 . The electron density in the doped semiconductor is ___________ \times$ 10 9 /m 3 .
Answer: Enter a numeric value
233
MediumInteger TypeJEE Mains2021
In a given circuit diagram, a 5 V zener diode along with a series resistance is connected across a 50 V power supply. The minimum value of the resistance required, if the maximum zener current is 90 mA will be __________ $\Omega$.
Answer: Enter a numeric value
234
EasyInteger TypeJEE Mains2021
A zener diode having zener voltage 8 V and power dissipation rating of 0.5 W is connected across a potential divider arranged with maximum potential drop across zener diode is as shown in the diagram. The value of protective resistance R p is .................... $\Omega$.
Answer: Enter a numeric value
235
MediumInteger TypeJEE Mains2021
For the forward biased diode characteristics shown in the figure, the dynamic resistance at I D = 3 mA will be __________ $\Omega$.
Answer: Enter a numeric value
236
EasyInteger TypeJEE Mains2021
The typical output characteristics curve for a transistor working in the common-emitter configuration is shown in the figure. The estimated current gain from the figure is __________.
Answer: Enter a numeric value
237
MediumInteger TypeJEE Mains2021
An npn transistor operates as a common emitter amplifier with a power gain of 10 6 . The input circuit resistance is 100$\Omega and the output load resistance is 10 K\Omega. The common emitter current gain '\beta$' will be ________. (Round off to the Nearest Integer).
Answer: Enter a numeric value
238
MediumInteger TypeJEE Mains2021
The value of power dissipated across the zener diode (V z = 15V) connected in the circuit as shown in the figure is x $\times 10 -$1 watt. The value of x, to the nearest integer, is __________.
Answer: Enter a numeric value
239
EasyInteger TypeJEE Mains2021
In the logic circuit shown in the figure, if input A and B are 0 to 1 respectively, the output at Y would be 'x'. The value of x is ____________.
Answer: Enter a numeric value
240
MediumInteger TypeJEE Mains2021
The zener diode has a V z = 30V. The current passing through the diode for the following circuit is ________ mA.
Answer: Enter a numeric value
241
MediumInteger TypeJEE Mains2021
The circuit contains two diodes each with a forward resistance of 50$\Omega and with infinite reverse resistance. If the battery voltage is 6V, the current through the 120\Omega$ resistance is ____________ mA.
Answer: Enter a numeric value
242
EasyInteger TypeJEE Mains2021
In connection with the circuit drawn below, the value of current flowing through 2 k$\Omega resistor is _________ \times 10 -$4 A.
Answer: Enter a numeric value
243
MediumInteger TypeJEE Mains2020
The output characteristics of a transistor is shown in the figure. When V CE is 10V and I C = 4.0 mA, then value of $\beta $ ac is __________.
Answer: Enter a numeric value
244
MediumInteger TypeJEE Mains2020
The circuit shown below is working as a 8 V dc regulated voltage source. When 12 V is used as input, the power dissipated (in mW) in each diode is; (considering both zener diodes are identical) _________.
Answer: Enter a numeric value
245
MediumInteger TypeJEE Mains2020
Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. Built in potential in each diode is 0.7 V. For the input voltages shown in the figure, the voltage (in Volts) at point A is __________.
Answer: Enter a numeric value
246
MediumJEE Mains2016
For a common emitter configuration, if $\alpha and \beta have their usual meanings, the incorrect relationship between \alpha and \beta $ is :
Options:
A) \alpha = {\beta \over {1 + \beta }}
B) \alpha = {{{\beta ^2}} \over {1 + {\beta ^2}}}
C) {1 \over \alpha } = {1 \over \beta } + 1
D) \alpha = {\beta \over {1 - {\beta ^2}}}
246
Total Questions
113
Easy
133
Medium
0
Hard
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